MBE precursor

MBE precursor

Molecular beam epitaxy (MBE) is a sophisticated thin-film deposition technique used to grow ultra-thin layers of materials with high precision. It operates under ultra-high vacuum conditions, which allows mbe molecular beams of atoms or molecules to be directed onto a heated substrate where they condense and form a crystal lattice. This method is capable of producing high-quality single-crystal thin films, quantum wells, and superlattices, and is particularly adept at creating complex semiconductor structures with precise control over composition and doping. MBE epitaxy is widely used in the fabrication of advanced electronic and optical devices, such as semiconductor lasers and high-performance integrated circuits. The process is characterized by its ability to grow materials layer by layer, allowing for the fine-tuning of material properties at the atomic level.

MBE Precursor Types

Ultra pure indium (In)

Ultra pure antimony (Sb)

Ultra pure gallium (Ga)

Ultra pure arsenic (As)

Ultra pure aluminum (Al)

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