OST Photonics gaas epi wafer
GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high conversion efficiency. The RF devices produced with GaAs substrates are commonly used in wireless communication applications, including wireless networks (WLAN), mobile communication, 4G/5G base stations, satellite communications, and WiFi communications. With the development of mini-LED and micro-LED, red light LEDs produced with GaAs substrates are increasingly used for display screens and in AR/VR.
OST Photonics offer 2", 3", 4", 6" GaAs wafers grown by VGF/LEC technology. There are five types of GaAs materials for you to choose from: semi-insulating GaAs (undoped), N-type GaAs (Si doped), semi-insulating GaAs (Cr doped), N-type GaAs (Te doped) and P-type GaAs (Zn doped). The thickness can be customized according to your requirements. In addition, customized GaAs substrates are also available upon requests.
Application of GaAs Wafers
Wireless communication
Red light LEDs
Satellite communications
Monolithic microwave integrated circuits (MMIC) for 5G
Radio frequency integrated circuits (RFIC)
Advantages of GaAs Wafers
Direct band gap
High electron mobility
High-frequency low noise
High conversion efficiency
Ability of GaAs Wafers
Orientation:<100>
Dimension: 2", 3", 4", 6", 25x25mm, 10x10mm, 10x5mm, 5x5mm etc.
Thickness: 350 μm, 500 μm, 650 μm etc.
Available items: wafers, substrates, blanks and customized products
Product Parameters of GaAs Wafers
Item Specifications
Conduct Type N-type P-type Semi-insulating Semi-insulating N-type
Crystal Growth Method VGF VGF/LEC VGF/LEC VGF LEC
Dopant Si Zn Undoped Cr Te
Carrier Concentration (/cm3) (0.4-4) ×10^18 (0.5-5) ×10^19 (0.4-4.4) ×10^8 - (1-2) ×10^17
Resistivity (ohm.cm) (1.2-9.9) ×10^-3 - >1x10^7 >5x10^7 (0.74-1.05) ×10^-2
Mobility (cm2/v.s) >1000 50-120 >4000 5500-6000 >1500
Etch Pit Density (EPD) (/cm2) <5000 <5000 <5000 <5000 <10000
Dimension 2", 3", 4", 6"
Wafer Orientation <100>±0.5°
OF/IF US, EJ or notch
Laser Marking Upon request
Thickness 350 μm, 500 μm, 650 μm etc.
TTV(P/P) (μm) ≤5
TTV(P/E) (μm) ≤10
Warp (μm) ≤10
Surface Polished/Polished or Polished/Etched
Epi-ready Yes
Package Cassette or single wafer container
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OST Photonics GaAs Wafers
Adventurehttps://www.ostphotonics.com/products/gaas-wafers.html OST Photonics gaas epi wafer GaAs is a semi-conductor material with excellent performance characteristics including direct band gap, high electron mobility, high-frequency low noise, and high co...
